Central Semiconductor Corp. Bipolar Transistors - BJT 2N6425

The 2N6425 is a silicon PNP power transistor designed for high-speed switching and high-voltage amplifier applications, housed in a TO-66 package. It has a collector-base voltage rating of 325 V, a collector-emitter voltage rating of 300 V, and an emitter-base voltage of 6.0 V. The device supports a continuous collector current of 1.0 A and a peak collector current of 2.0 A, with a power dissipation of 20 W. The thermal resistance from junction to case is 8.75 °C/W, and the operating and storage junction temperature range is -65 to +200 °C. Current gain (hFE) ranges from 40 to 200 at VCE=10 V and IC=100 mA. The transition frequency is 10 MHz at VCE=10 V and IC=100 mA.