The 2N6423 is a silicon PNP power transistor designed for high-speed switching and high-voltage amplifier applications. It is packaged in a TO-66 case and has a maximum collector-base voltage of 500 V, collector-emitter voltage of 300 V, and emitter-base voltage of 6.0 V. It supports a continuous collector current of 2.0 A and a power dissipation of 35 W. The thermal resistance from junction to case is 5.0 °C/W, and the junction temperature ranges from -65 to +200 °C. It has a transition frequency of 15 MHz and a current gain (hFE) of 10 to 100 at VCE=2.0 V and IC=750 mA. The collector-emitter saturation voltage is 1.0 V at IC=750 mA and IB=75 mA.
Bipolar Transistors - BJT 500Vcbo 300Vceo 6.0Vebo 2.0A 35W
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N6423 |
| Product Name | Bipolar Transistors - BJT |
