Central Semiconductor Corp. Darlington Transistors 2N6421

The 2N6421 is a silicon PNP power transistor designed for high-speed switching and high-voltage amplifier applications in the TO-66 package. It has a collector-emitter voltage rating of 250 V, a continuous collector current of 2.0 A, and a maximum power dissipation of 35 W. The thermal resistance from junction to case is 5.0 °C/W, and the operating and storage junction temperature range is -65 to +200 °C. Electrical characteristics include a minimum hFE of 40 at VCE=10 V and IC=100 mA, a transition frequency of 10 MHz at IC=200 mA, and a collector-emitter saturation voltage of 0.75 V at IC=1.0 A and IB=125 mA. The device meets no specified industry standards beyond its electrical and thermal ratings.