Central Semiconductor Corp. Bipolar Transistors - BJT 2N6420

The 2N6420 is a silicon PNP power transistor in a TO-66 package for high-speed switching and high-voltage amplification. It has a collector-base voltage of 250 V, collector-emitter voltage of 175 V, and emitter-base voltage of 6.0 V. The continuous collector current is 1.0 A with a peak current of 5.0 A and power dissipation of 35 W. Thermal resistance from junction to case is 5.0 °C/W. Operating and storage junction temperature ranges from -65 to +200 °C. Current gain (hFE) is 40 at VCE=10 V and IC=100 mA. Transition frequency (fT) is 10 MHz at VCE=10 V and IC=200 mA. Collector-emitter saturation voltage is 0.75 V at IC=1.0 A and IB=125 mA. Base-emitter saturation voltage is 1.4 V at IC=1.0 A and IB=100 mA. Collector cutoff current is 10 mA at VCE=150 V. Output capacitance is 120 pF at VCB=10 V.