Central Semiconductor Corp. Bipolar Transistors - BJT 2N6386

Description
Bipolar Transistors - BJT NPN Pwr Darlington
Description
Bipolar Transistors - BJT NPN Pwr Darlington
Datasheet
Datasheet Summary
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2N6386 is an NPN power Darlington transistor in a TO-220 package, rated for a collector current of 8.0 A and power dissipation of 65 W, with collector-emitter and collector-base breakdown voltages of 40 V and 40 V respectively, and a minimum DC current gain of 1,000. It features a collector-emitter saturation voltage of 3.0 V at 3.0 A, and a transition frequency of 20 MHz.

Datasheet Summary
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2N6386 is an NPN power Darlington transistor in a TO-220 package, rated for a collector current of 8.0 A and power dissipation of 65 W, with collector-emitter and collector-base breakdown voltages of 40 V and 40 V respectively, and a minimum DC current gain of 1,000. It features a collector-emitter saturation voltage of 3.0 V at 3.0 A, and a transition frequency of 20 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6386
Bipolar Transistors - BJT 2N6386
Bipolar Transistors - BJT NPN Pwr Darlington

Bipolar Transistors - BJT NPN Pwr Darlington

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N6386
Product Name Bipolar Transistors - BJT
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