Central Semiconductor Corp. Bipolar Transistors - BJT 2N6384

The 2N6384 is an NPN silicon power Darlington transistor designed for power amplifier applications, housed in a TO-3 case. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 10 A, and a peak collector current of 15 A. The device dissipates up to 100 W with a thermal resistance of 1.75 °C/W. The junction temperature range is -65 to +200 °C. Electrical characteristics include a collector-emitter saturation voltage of 3.0 V at 10 A collector current and 100 mA base current, and a minimum DC current gain of 100 at 10 A. The emitter-base voltage is rated at 5.0 V.