Central Semiconductor Corp. Bipolar Transistors - BJT 2N6374

The 2N6374 is an NPN silicon power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 40 V, a collector-base voltage rating of 50 V, and a collector current rating of 6.0 A. The device dissipates up to 40 W and has a thermal resistance of 4.3 °C/W. Operating and storage junction temperatures range from -65 °C to +200 °C. The collector-emitter saturation voltage is rated at 1.0 V at 3.0 A collector current and 300 mA base current. Current gain (hFE) is specified at a minimum of 20 at 3.0 A collector current and 4.0 V collector-emitter voltage. Transition frequency (fT) is 4.0 MHz at 1.0 A collector current and 1.0 MHz frequency.