Central Semiconductor Corp. Bipolar Transistors - BJT 2N6373

The 2N6373 is an NPN silicon power transistor in a TO-66 hermetically sealed metal case, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 70 V, collector-emitter voltage of 60 V, and a continuous collector current of 6.0 A. Power dissipation is 40 W with a thermal resistance of 4.3 °C/W. The operating and storage junction temperature range is -65 to +200 °C. Minimum current gain (hFE) is 20 at IC=2.5 A and VCE=4.0 V. The transition frequency (fT) is 4.0 MHz at IC=1.0 A and VCE=4.0 V. The collector-emitter saturation voltage (VCE(sat)) is 1.0 V at IC=2.5 A and IB=250 mA, and the base-emitter ON voltage (VBE(ON)) is 2.0 V at IC=2.5 A. All specifications are valid at TC=25°C unless otherwise noted.