Central Semiconductor Corp. Bipolar Transistors - BJT 2N6372

The 2N6372 is an NPN silicon power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 90 V, a collector-emitter voltage rating of 80 V, a continuous collector current of 6.0 A, and a power dissipation of 40 W. The thermal resistance from junction to case is 4.3 °C/W, and the operating and storage junction temperature range is -65 to +200 °C. The device has a minimum current gain (hFE) of 5.0 at IC=6.0 A and VCE=4.0 V, with a transition frequency (fT) of 4.0 MHz at IC=1.0 A and VCE=4.0 V.