Central Semiconductor Corp. Bipolar Transistors - BJT 2N6318

The 2N6318 is a PNP silicon power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 7.0 A, and a power dissipation of 90 W. The thermal resistance from junction to case is 1.95 °C/W. Operating and storage junction temperatures range from -65 °C to +200 °C. The device exhibits a collector-emitter saturation voltage of 2.0 V at IC=7.0 A and IB=1.75 A, and a base-emitter saturation voltage of 2.5 V under the same conditions. Current gain (hFE) ranges from 4.0 at IC=7.0 A to 20-100 at IC=2.5 A. The transition frequency is 4.0 MHz. Output capacitance is 300 pF at VCB=10 V and f=1.0 MHz. Turn-off time is 1.8 µs. The part complies with AEC-Q200 and RoHS standards.