Central Semiconductor Corp. Bipolar Transistors - BJT 2N6317

The 2N6317 is a PNP silicon power transistor in a hermetically sealed TO-66 case, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, a continuous collector current of 7.0 A, and a power dissipation of 90 W. The thermal resistance junction-to-case is 1.95 °C/W, and the operating and storage junction temperature ranges from -65 to +200 °C. The saturation voltage is 2.0 V at a collector current of 7.0 A and base current of 1.75 A, with a base-emitter saturation voltage of 2.5 V under the same conditions. The current gain (hFE) ranges from 4.0 to 100 depending on collector current. The transition frequency is 4.0 MHz. The device meets no specified industry standards beyond its electrical and thermal ratings.