Central Semiconductor Corp. Bipolar Transistors - BJT 2N6316

The 2N6316 is an NPN silicon power transistor in a TO-66 hermetically sealed metal case, designed for general purpose amplifier and switching applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 7.0 A, and a power dissipation of 90 W. The thermal resistance from junction to case is 1.95 °C/W. Operating and storage junction temperatures range from -65 to +200 °C. The current gain (hFE) ranges from 20 to 100 at a collector current of 2.5 A and a collector-emitter voltage of 4.0 V. The collector-emitter saturation voltage is 2.0 V at a collector current of 7.0 A and a base current of 1.75 A. The transition frequency is 4.0 MHz.