Central Semiconductor Corp. Bipolar Transistors - BJT 2N6315

The 2N6315 is an NPN silicon power transistor in a TO-66 hermetically sealed metal case, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, a continuous collector current of 7.0 A, and a power dissipation of 90 W. The thermal resistance from junction to case is 1.95 °C/W. The operating and storage junction temperature range is from -65 °C to +200 °C.