Central Semiconductor Corp. Bipolar Transistors - BJT 2N6314

The 2N6314 is a silicon PNP power transistor in a TO-66 case, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, and a continuous collector current of 5.0 A. The device dissipates up to 75 W with a thermal resistance of 2.32 °C/W. The operating and storage junction temperature range is -65 to +200 °C. Electrical characteristics include a saturation voltage of 4.0 V at IC=5.0 A and IB=1.25 A, and a current gain (hFE) of 4.0 at VCE=4.0 V and IC=5.0 A. The transition frequency is 4.0 MHz at VCE=10 V and IC=0.5 A. The part meets RoHS compliance by default for the PBFREE variant, and is marked with the full part number.