The 2N6313 is a PNP silicon power transistor in a TO-66 package, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 5.0 A. The device dissipates up to 75 W with a thermal resistance of 2.32 °C/W. The operating and storage junction temperature range is from -65 °C to +200 °C. It meets the AEC-Q200 qualification standard and is available in Pb-free plating options.
Bipolar Transistors - BJT 60Vcbo 60Vceo 5.0Vebo 5.0A 75W
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N6313 |
| Product Name | Bipolar Transistors - BJT |
