Central Semiconductor Corp. Bipolar Transistors - BJT 2N6312

The 2N6312 is a PNP silicon power transistor in a TO-66 case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, a continuous collector current of 5.0 A, and a power dissipation of 75 W. The thermal resistance from junction to case is 2.32 °C/W. The operating and storage junction temperature range is -65 to +200 °C. The collector-emitter saturation voltage is 0.7 V at IC=1.5 A and IB=0.15 A, and 2.0 V at IC=3.0 A and IB=0.3 A. The current gain (hFE) ranges from 25 to 100 at VCE=2.0 V and IC=1.5 A. The transition frequency is 4.0 MHz at VCE=10 V and IC=0.5 A. The output capacitance is 300 pF at VCB=10 V and IE=0.