Central Semiconductor Corp. Bipolar Transistors - BJT 2N6297

The 2N6297 is a PNP silicon Darlington power transistor in a TO-66 case, designed for high gain amplifier and medium speed switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4.0 A, and a power dissipation of 50 W. The thermal resistance from junction to case is 3.5 °C/W. The device operates and can be stored across a junction temperature range of -65 to +200 °C. Saturation voltage is 3.0 V at a collector current of 4.0 A and base current of 40 mA, with a saturation base-emitter voltage of 4.0 V under the same conditions. Current gain (hFE) is a minimum of 100 at a collector current of 4.0 A. The collector-base capacitance is 200 pF at 10 V reverse bias and 100 kHz.