Central Semiconductor Corp. Darlington Transistors 2N6296

The 2N6296 is a PNP silicon Darlington power transistor in a TO-66 package, designed for high gain amplifier and medium speed switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, a continuous collector current of 4.0 A, and a power dissipation of 50 W. The junction temperature range is -65 to +200°C with a thermal resistance of 3.5 °C/W. The collector-emitter saturation voltage is 3.0 V at a collector current of 4.0 A and base current of 40 mA. The emitter-base saturation voltage is 4.0 V under the same conditions. The current gain (hFE) is a minimum of 100 at a collector current of 4.0 A.