Central Semiconductor Corp. Bipolar Transistors - BJT 2N6292

The 2N6292 is an NPN silicon power transistor in a TO-220 package, designed for general purpose power amplifier and switching applications. It has a collector-emitter voltage rating of 70 V, a continuous collector current of 7.0 A, and a power dissipation of 40 W. The thermal resistance from junction to case is 3.13 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. The device has a collector-emitter saturation voltage of 3.5 V at 7.0 A collector current and 3.0 A base current, with a current gain (hFE) of 30 to 150 at 3.0 A collector current. The TO-220 case has the collector connected to the tab.