Central Semiconductor Corp. Darlington Transistors 2N6287

The 2N6287 is a PNP silicon Darlington transistor in a TO-3 case, designed for high current, high gain amplifier and switching applications. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 20 A, and a power dissipation of 160 W. The thermal resistance junction-to-case is 1.09 °C/W. The device operates and stores at junction temperatures from -65 to +200 °C. Saturation voltage is 3.0 V at 20 A collector current and 200 mA base current, with a saturation base-emitter voltage of 4.0 V under the same conditions. Current gain (hFE) is a minimum of 100 at 20 A collector current and 3.0 V collector-emitter voltage. The output capacitance is 600 pF at 10 V collector-base voltage and 100 kHz. The part meets the AEC-Q200 and RoHS standards.