Central Semiconductor Corp. Darlington Transistors 2N6283

The 2N6283 is an NPN silicon Darlington transistor in a TO-3 case, designed for high current, high gain amplifier and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 20 A, and a power dissipation of 160 W. The thermal resistance from junction to case is 1.09 °C/W. The operating and storage junction temperature range is -65 to +200 °C. The saturation voltage is 3.0 V at a collector current of 20 A and base current of 200 mA, with a base-emitter saturation voltage of 4.0 V under the same conditions. Current gain (hFE) is 100 at a collector current of 20 A and collector-emitter voltage of 3.0 V. The collector-base capacitance is 400 pF at 10 V and 100 kHz. The device has a peak collector current rating of 40 A and a continuous base current limit of 0.5 A.