The 2N6264 is a silicon NPN power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 170 V, collector-emitter voltage of 150 V, continuous collector current of 3.0 A, and power dissipation of 50 W. The operating and storage junction temperature ranges from -65 to +200 °C, with a thermal resistance of 3.5 °C/W. Current gain (hFE) ranges from 5.0 to 60 depending on collector current. The device meets no stated industry standards.
Bipolar Transistors - BJT 170Vcbo 170Vcev 160Vcer 150Vceo 50W
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N6264 |
| Product Name | Bipolar Transistors - BJT |
