Central Semiconductor Corp. Bipolar Transistors - BJT 2N6214

Description
Bipolar Transistors - BJT PNP 450Vcbo 450Vcex 425Vcer 400Vceo 35W
Description
Bipolar Transistors - BJT PNP 450Vcbo 450Vcex 425Vcer 400Vceo 35W
Datasheet
Datasheet Summary
Powered by GS/AI

The 2N6214 is a PNP silicon power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 450 V, collector-emitter voltage of 400 V, continuous collector current of 2.0 A, and power dissipation of 35 W at TC=25°C. Thermal resistance is 5.0 °C/W. Operating and storage junction temperature ranges from -65°C to +200°C. The device meets no specified industry standards beyond its electrical and mechanical ratings.

Datasheet Summary
Powered by GS/AI

The 2N6214 is a PNP silicon power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 450 V, collector-emitter voltage of 400 V, continuous collector current of 2.0 A, and power dissipation of 35 W at TC=25°C. Thermal resistance is 5.0 °C/W. Operating and storage junction temperature ranges from -65°C to +200°C. The device meets no specified industry standards beyond its electrical and mechanical ratings.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6214
Bipolar Transistors - BJT 2N6214
Bipolar Transistors - BJT PNP 450Vcbo 450Vcex 425Vcer 400Vceo 35W

Bipolar Transistors - BJT PNP 450Vcbo 450Vcex 425Vcer 400Vceo 35W

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N6214
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data