Central Semiconductor Corp. Bipolar Transistors - BJT 2N6211

The 2N6211 is a silicon PNP power transistor for high-speed switching and high-voltage amplification, in a TO-66 package. It has a collector-base voltage of 275 V, collector-emitter voltage of 225 V, and emitter-base voltage of 6.0 V. Continuous collector current is 2.0 A, with a peak of 5.0 A, and power dissipation is 35 W. Thermal resistance from junction to case is 5.0 °C/W. Operating and storage junction temperature ranges from -65 to +200 °C. Current gain (hFE) is 10 to 100 at 1.0 A collector current. Transition frequency is 20 MHz. Collector output capacitance is 220 pF. Rise and fall times are 0.6 μs; storage time is 2.5 μs. It is RoHS compliant with the PBFREE suffix and meets AEC-Q200.