Central Semiconductor Corp. Bipolar Transistors - BJT 2N6109

The 2N6109 is a PNP silicon power transistor in a TO-220 package, designed for general purpose power amplifier and switching applications. It has a collector-emitter voltage rating of 50 V, a continuous collector current of 7.0 A, and a power dissipation of 40 W. The transistor features a thermal resistance of 3.13 °C/W and an operating junction temperature range of -65 to +150 °C. The collector-base voltage is 60 V, and the emitter-base voltage is 5.0 V. Current gain (hFE) ranges from 30 to 150 at a collector current of 2.5 A and a collector-emitter voltage of 4.0 V. The saturation voltage is 3.5 V at a collector current of 7.0 A and base current of 3.0 A. The device is marked with its full part number on the package.