Central Semiconductor Corp. Single Bipolar Transistors 2N6109 PBFREE

The 2N6109 is a PNP silicon power transistor for general purpose power amplifier and switching applications, housed in a TO-220 package with dimensions of 14.23 to 15.87 mm in length, 10.01 to 10.60 mm in width, and a tab connected to the collector. It has a collector-emitter voltage rating of 50 V, a continuous collector current of 7.0 A, and a power dissipation of 40 W. The thermal resistance from junction to case is 3.13 °C/W, and the operating and storage junction temperature ranges from -65 to +150 °C. The collector-emitter saturation voltage is 3.5 V at 7.0 A collector current and 3.0 A base current, and the current gain (hFE) ranges from 30 to 150 at a collector current of 2.5 A and collector-emitter voltage of 4.0 V. The part is bulk packed in quantities of 500.