The 2N6099 is a silicon NPN bipolar transistor in a TO-220 package, rated for a collector current of 10 A and a power dissipation of 75 W. It has a collector-emitter breakdown voltage of 60 V, a DC current gain (hFE) minimum of 20 at 5 A collector current, and a transition frequency of 5 MHz. The package has a lead spacing of 10.01 to 10.60 mm between pins 1 and 3, with a case height of 5.85 to 6.85 mm. The tab is electrically connected to the collector. The part is discontinu
Bipolar (BJT) Transistor NPN 60V 10A 5MHz 75W Through Hole TO-220-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N6099PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |