Central Semiconductor Corp. Single Bipolar Transistors 2N6076 TIN/LEAD

The 2N6076 is a silicon PNP transistor for general purpose applications in a TO-92 package. It has a collector-base voltage rating of 25 V, a collector-emitter voltage rating of 25 V, and a continuous collector current of 100 mA. Power dissipation is rated at 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 100 to 500 at VCE=10 V and IC=10 mA. The transition frequency is 200 MHz, and collector-output capacitance is 1.0 to 13 pF at VCB=10 V and f=1.0 MHz. Base-emitter saturation voltage is 0.80 V at IC=10 mA and IB=1.0 mA. Collector-emitter saturation voltage is 0.25 V under the same conditions.