Central Semiconductor Corp. Darlington Transistors 2N6052

The 2N6052 is a PNP silicon Darlington power transistor in a TO-3 case, designed for high gain amplifier and switching applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 100 V, and can handle a continuous collector current of 12 A with a peak current of 20 A. Power dissipation is rated at 150 W, with a thermal resistance of 1.17 °C/W. The operating and storage junction temperature range is -65 to +200 °C. At 12 A collector current and 120 mA base current, the collector-emitter saturation voltage is 3.0 V and the base-emitter saturation voltage is 4.0 V. Current gain ranges from 100 to 18,000 depending on bias conditions.