Central Semiconductor Corp. Darlington Transistors 2N6051

The 2N6051 is a PNP silicon Darlington power transistor in a TO-3 case, designed for high-gain amplifier and switching applications. It has a collector-base voltage rating of 80 V and a collector-emitter voltage rating of 80 V. The continuous collector current is 12 A, with a peak collector current of 20 A. Power dissipation is 150 W, and thermal resistance from junction to case is 1.17 ℃/W. The collector-emitter saturation voltage is 3.0 V at 12 A collector current and 120 mA base current. Base-emitter saturation voltage is 4.0 V under the same conditions. Current gain (hFE) ranges from 100 to 750, depending on collector current. Operating and storage junction temperatures range from -65 ℃ to +200 ℃.