Central Semiconductor Corp. Darlington Transistors 2N6050

The 2N6050 is a PNP silicon Darlington power transistor in a TO-3 case, designed for high-gain amplifier and switching applications. It has a collector-base and collector-emitter voltage rating of 60 V, a continuous collector current of 12 A, and a peak current of 20 A. Power dissipation is 150 W with a thermal resistance of 1.17 °C/W. The junction temperature range is -65 °C to +200 °C. Collector-emitter saturation voltage is 2.0 V at 6.0 A and 3.0 V at 12 A. Base-emitter saturation voltage is 4.0 V at 12 A. Current gain (hFE) ranges from 100 to 18,000. Collector cutoff current is 0.5 mA at rated voltage and 25 °C. Output capacitance is 500 pF at 10 V reverse bias. The case, base, and emitter are connected to the metal case, lead 1, and lead 2, respectively.