Central Semiconductor Corp. Darlington Transistors 2N6040

The 2N6040 is a PNP silicon power Darlington transistor in a TO-220 package, designed for general purpose amplifier applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 8.0 A. The device dissipates up to 75 W with a thermal resistance of 1.67 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. At 4.0 A collector current and 4.0 V collector-emitter voltage, the current gain ranges from 1,000 to 20,000. Saturation voltage is 2.0 V at 4.0 A collector current and 16 mA base current. The emitter-base voltage is rated at 5.0 V. The transistor has an unloaded output capacitance of 300 pF at 10 V collector-base voltage and 100 kHz.