Central Semiconductor Corp. Darlington Transistors 2N6039

The 2N6039 is an NPN silicon Darlington power transistor in a TO-126 case, designed for general purpose amplifier and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4.0 A, and a power dissipation of 40 W. The saturated collector-emitter voltage is 3.0 V at a collector current of 4.0 A and base current of 40 mA, with a saturated base-emitter voltage of 4.0 V under the same conditions. The current gain (hFE) ranges from 100 to 15,000 at a collector current of 2.0 A and collector-emitter voltage of 3.0 V. The device operates from -65°C to +150°C, with a thermal resistance from junction to case of 3.12 °C/W. The emitter, collector, and base are arranged as pins 1, 2, and 3 respectively.