Central Semiconductor Corp. Darlington Transistors 2N6035

The 2N6035 is a PNP silicon Darlington power transistor in a TO-126 case, designed for general purpose amplifier and switching applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 4.0 A, and a power dissipation of 40 W at TC=25°C. The transistor has a thermal resistance of 3.12 °C/W from junction to case and 83.3 °C/W from junction to ambient. The saturated collector-emitter voltage is 3.0 V at IC=4.0 A and IB=40 mA, with a saturated base-emitter voltage of 4.0 V under the same conditions. The current gain (hFE) ranges from 750 to 15,000 at IC=2.0 A and VCE=3.0 V. The operating and storage junction temperature range is -65 to +150 °C.