Central Semiconductor Corp. TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6028 2N6028

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003971-2N6028 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25μA Current - Peak: 150nA Output Voltage: 6V Categories: Discrete Semiconductor Products Status: Active Dimension: TO-226-3, TO-92-3 (TO-226AA) Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003971-2N6028 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25μA Current - Peak: 150nA Output Voltage: 6V Categories: Discrete Semiconductor Products Status: Active Dimension: TO-226-3, TO-92-3 (TO-226AA) Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Datasheet
Datasheet Summary
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The 2N6028 is a silicon programmable unijunction transistor in a TO-92 package. It has a maximum anode-cathode voltage of 40 V, a peak repetitive forward current of 1.0 A for 100 μs pulses at 1.0% duty cycle, and a DC anode current limit of 150 mA. Power dissipation is rated at 300 mW, with an operating junction temperature range of -50°C to +100°C. The intrinsic standoff ratio and valley current are programmable, with a valley current specification of 25 μA at VS=10 V and RG=10 kΩ. The output voltage is 6.0 V with CC=0.2 μF, and the rise time is 80 ns. Gate-to-anode leakage current is specified at 10 nA at VS=40 V. The device meets no stated industry standards.

Datasheet Summary
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The 2N6028 is a silicon programmable unijunction transistor in a TO-92 package. It has a maximum anode-cathode voltage of 40 V, a peak repetitive forward current of 1.0 A for 100 μs pulses at 1.0% duty cycle, and a DC anode current limit of 150 mA. Power dissipation is rated at 300 mW, with an operating junction temperature range of -50°C to +100°C. The intrinsic standoff ratio and valley current are programmable, with a valley current specification of 25 μA at VS=10 V and RG=10 kΩ. The output voltage is 6.0 V with CC=0.2 μF, and the rise time is 80 ns. Gate-to-anode leakage current is specified at 10 nA at VS=40 V. The device meets no stated industry standards.

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TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6028 - 1003971-2N6028 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6028
1003971-2N6028
TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6028 1003971-2N6028
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003971-2N6028 Voltage: 40V Power Dissipation (Max): 300mW Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25μA Current - Peak: 150nA Output Voltage: 6V Categories: Discrete Semiconductor Products Status: Active Dimension: TO-226-3, TO-92-3 (TO-226AA) Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 1003971-2N6028
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25μA
Current - Peak: 150nA
Output Voltage: 6V
Categories: Discrete Semiconductor Products
Status: Active
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1003971-2N6028
Product Name TRANSISTORS - Programmable Unijunction Transistors (PUTs) - 2N6028
Package Type TO-92; SOT3
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