The 2N5963 is a silicon NPN transistor in a TO-92 package, designed for high gain and low noise applications. It has a collector-emitter voltage rating of 30 V, a collector-base voltage of 30 V, and an emitter-base voltage of 7.0 V. The continuous collector current is 50 mA, with a power dissipation of 625 mW at 25°C. The current gain (hFE) ranges from 1.2K to 2.2K at VCE=5.0V and IC=10mA. The transition frequency is 150 MHz, and the noise figure is 6.0 dB at IC=100μa, RS=100kΩ, and 1.0kHz. The operating and storage junction temperature range is -65°C to +150°C.
Bipolar Transistors - BJT NPN 30Vcbo 30Vceo 7.0Vebo 50mA 625mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N5963 |
| Product Name | Bipolar Transistors - BJT |
