The 2N5962 is an NPN silicon transistor in a TO-92 package, designed for high gain and low-noise applications. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 50 mA, and a power dissipation of 625 mW. The device features a minimum hFE of 600 at IC=10 mA and VCE=5 V, with a transition frequency of 100 MHz. Noise figure is 6.0 dB at IC=100 μA and RS=1.0 kΩ, and 3.0 dB at IC=10 μA and RS=10 kΩ. Operating and storage junction temperatures range from -65 °C to +150 °C.
Bipolar Transistors - BJT NPN Gen Pur SS
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N5962 |
| Product Name | Bipolar Transistors - BJT |
