Central Semiconductor Corp. Bipolar Transistors - BJT 2N5956

The 2N5956 is a PNP silicon power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a maximum collector-base voltage of 50 V, collector-emitter voltage of 40 V, emitter-base voltage of 5.0 V, continuous collector current of 6.0 A, and power dissipation of 40 W. The thermal resistance is 4.3 °C/W, and the junction temperature ranges from -65 to +200 °C. Current gain hFE is specified between 20 and 100 at IC = 3.0 A and VCE = 4.0 V. The transition frequency fT is 5.0 MHz at IC = 1.0 A and VCE = 4.0 V. Collector-emitter saturation voltage is 1.0 V at IC = 3.0 A and IB = 300 mA, and 2.0 V at IC = 6.0 A and IB = 1.2 A.