Central Semiconductor Corp. Bipolar Transistors - BJT 2N5954

The 2N5954 is a PNP silicon power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 90 V, collector-emitter voltage of 80 V, collector current of 6.0 A, power dissipation of 40 W, and thermal resistance of 4.3 °C/W. The operating and storage junction temperature range is -65 to +200 °C. Electrical characteristics include a collector-emitter saturation voltage of up to 2.0 V at 6.0 A collector current and 1.2 A base current, and a DC current gain (hFE) of 20 to 100 at 2.0 A collector current. The transistor meets no stated industry standards beyond its technical ratings.