Central Semiconductor Corp. Bipolar Transistors - BJT 2N5885

The 2N5885 is an NPN silicon power transistor in a TO-3 case, designed for power amplifier and switching applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, and a continuous collector current of 25 A. The device dissipates up to 200 W with a thermal resistance of 0.875 °C/W. The junction temperature ranges from -65 to +200 °C. At 25 A collector current and 6.25 A base current, the collector-emitter saturation voltage is 4.0 V and the base-emitter saturation voltage is 2.5 V. The current gain (hFE) at 10 A collector current is between 20 and 100. The transition frequency is 4.0 MHz, and the output capacitance is 500 pF at 10 V collector-base voltage. The turn-off delay time is 1.0 μs, with a storage time of 1.0 μs and a fall time of 0.8 μs under specified test conditions.