Central Semiconductor Corp. Bipolar Transistors - BJT 2N5884

The 2N5884 is a PNP silicon power transistor in a TO-3 case, designed for power amplifier and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 25 A. The device dissipates up to 200 W with a thermal resistance of 0.875 °C/W. The operating and storage junction temperature range is -65 to +200 °C. Saturation voltage is 1.0 V at IC=15A and IB=1.5A, and 4.0 V at IC=25A and IB=6.25A. The current gain (hFE) ranges from 20 to 100 at IC=10A and VCE=4.0V. The transition frequency is 4.0 MHz at IC=1.0A. The collector-base capacitance is 1000 pF at VCB=10V. The device complies with RoHS standards.