Central Semiconductor Corp. Bipolar Transistors - BJT 2N5823

The 2N5823 is a silicon NPN small signal transistor in a TO-92-18R package, designed for general-purpose amplifier applications requiring high collector current. It has a continuous collector current rating of 750 mA, a peak collector current of 1.0 A, and a power dissipation of 625 mW at 25°C. The collector-emitter voltage rating is 60 V, with a collector-base voltage of 70 V and an emitter-base voltage of 5.0 V. The transistor operates within a junction temperature range of -65 to +150°C. Current gain (hFE) is specified at 100 to 250 for IC=2.0 mA and 25 for IC=500 mA. The transition frequency is 120 MHz at VCE=2.0 V, IC=50 mA, and f=20 MHz. Collector-emitter saturation voltage is 0.75 V at IC=500 mA and IB=50 mA. Thermal resistance is 200 °C/W from junction to ambient. The device meets RoHS compliance.