Central Semiconductor Corp. Single Bipolar Transistors 2N5823 TIN/LEAD

The 2N5823 is a PNP silicon transistor in a TO-92-18R package, designed for general purpose amplifier applications requiring high collector current. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 750 mA, and a power dissipation of 625 mW at 25°C. The transistor exhibits a minimum DC current gain of 25 at 500 mA collector current and a transition frequency of 120 MHz. Operating and storage junction temperatures range from -65°C to +150°C. The device is epoxy molded and features a collector-base voltage of 70 V and an emitter-base voltage of 5.0 V. The TIN/LEAD suffix indicates a lead finish option available for ordering, consistent with the series' plating customization.