The 2N5822 is an NPN silicon small signal transistor in a TO-92-18R package, designed for general purpose amplifier applications requiring high collector current. It has a collector-base voltage rating of 70 V, collector-emitter voltage of 60 V, and continuous collector current of 750 mA. Power dissipation is 625 mW at 25°C. The transistor has a minimum current gain (hFE) of 100 at 2 mA and 25 at 500 mA, with a transition frequency of 120 MHz at 50 mA. Operating and storage junction temperatures range from -65°C to +150°C.
Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N5822 |
| Product Name | Bipolar Transistors - BJT |
