Central Semiconductor Corp. Bipolar Transistors - BJT 2N5786 PBFREE

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Bipolar Transistors - BJT 45Vcbo 40Vceo 3.5Vebo 2.0V
Description
Bipolar Transistors - BJT 45Vcbo 40Vceo 3.5Vebo 2.0V
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The 2N5786 is an NPN bipolar transistor for amplification and switching, housed in a TO-39 case. It has a collector-base voltage rating of 45 V, a collector-emitter voltage of 40 V, and an emitter-base voltage of 3.5 V. The DC current gain (hFE) ranges from 150 to 1,600 at a collector current of 20 mA and a collector-emitter voltage of 2.0 V. The saturated collector-emitter voltage is 1.00 V at a collector current of 1,600 mA. The transition frequency is 5.0 GHz, and the collector-base capacitance is 15 pF. The device is RoHS compliant as indicated by the PBFREE suffix.

Datasheet Summary
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The 2N5786 is an NPN bipolar transistor for amplification and switching, housed in a TO-39 case. It has a collector-base voltage rating of 45 V, a collector-emitter voltage of 40 V, and an emitter-base voltage of 3.5 V. The DC current gain (hFE) ranges from 150 to 1,600 at a collector current of 20 mA and a collector-emitter voltage of 2.0 V. The saturated collector-emitter voltage is 1.00 V at a collector current of 1,600 mA. The transition frequency is 5.0 GHz, and the collector-base capacitance is 15 pF. The device is RoHS compliant as indicated by the PBFREE suffix.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N5786 PBFREE
Bipolar Transistors - BJT 2N5786 PBFREE
Bipolar Transistors - BJT 45Vcbo 40Vceo 3.5Vebo 2.0V

Bipolar Transistors - BJT 45Vcbo 40Vceo 3.5Vebo 2.0V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N5786 PBFREE
Product Name Bipolar Transistors - BJT
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