Central Semiconductor Corp. Bipolar Transistors - BJT 2N5783

The 2N5783 is a PNP silicon power transistor in a TO-39 package, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 45 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 3.5 A. Power dissipation is 10 W at TC=25°C with a junction-to-case thermal resistance of 17.5 °C/W. The operating and storage junction temperature range is -65 to +200 °C. Current gain (hFE) is 20 to 150 at IC=1.6 A and VCE=2.0 V. Collector-emitter saturation voltage is 1.0 V at IC=1.6 A and IB=160 mA. Transition frequency is 8.0 to 60 MHz at IC=100 mA and f=4.0 MHz. Turn-on and turn-off times are 0.5 µs and 2.5 µs, respectively, under specified conditions.