Central Semiconductor Corp. Bipolar Transistors - BJT 2N5682

The 2N5682 is an NPN silicon power transistor in a TO-39 case, designed for general-purpose amplifier and switching applications requiring high voltage. It has a collector-emitter voltage rating of 120 V, a continuous collector current of 1.0 A, and a power dissipation of 1.0 W at 25°C or 10 W at a case temperature of 25°C. The thermal resistance from junction to case is 17.5°C/W, and the junction temperature range is -65°C to +200°C. Current gain (hFE) is 5.0 at a collector current of 1.0 A and a collector-emitter voltage of 2.0 V. The collector-emitter saturation voltage is 2.0 V at a collector current of 1.0 A and a base current of 200 mA. The transition frequency is 30 MHz at a collector current of 100 mA and a collector-base voltage of 10 V.