Central Semiconductor Corp. Bipolar Transistors - BJT 2N5681

The 2N5681 is an NPN silicon power transistor in a TO-39 case, designed for general purpose amplifier and switching applications requiring high voltage operation. It has a collector-emitter voltage rating of 120 V, a continuous collector current of 1.0 A, and a power dissipation of 1.0 W at 25°C or 10 W at a case temperature of 25°C. The transistor features a minimum current gain (hFE) of 5.0 at a collector current of 1.0 A and a transition frequency of 30 MHz. Operating and storage junction temperatures range from -65°C to +200°C. Thermal resistance from junction to case is 17.5 °C/W and from junction to ambient is 175 °C/W.