Central Semiconductor Corp. Bipolar Transistors - BJT 2N5679

The 2N5679 is a PNP silicon power transistor in a TO-39 case, designed for general purpose amplifier and switching applications requiring high voltage operation. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 100 V, and a continuous collector current of 1.0 A. Power dissipation is 1.0 W at ambient temperature and 10 W at a case temperature of 25°C. The thermal resistance from junction to ambient is 175 °C/W and from junction to case is 17.5 °C/W. Operating and storage junction temperature ranges from -65 to +200 °C. Current gain (hFE) is 40 to 150 at 250 mA collector current and 5.0 at 1.0 A. The transition frequency is 30 MHz. The device is marked with its full part number and has an emitter-base voltage rating of 4.0 V.