Central Semiconductor Corp. Bipolar Transistors - BJT 2N5629 PBFREE

The 2N5629 is an NPN silicon power transistor in a TO-3 case, designed for high voltage and high power amplifier applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 100 V, an emitter-base voltage rating of 7.0 V, a continuous collector current of 16 A, and a power dissipation of 200 W. The device operates with a thermal resistance of 0.875 °C/W and a junction temperature range of -65 to +200 °C. With a minimum hFE of 25 at IC=8.0 A and VCE=2.0 V, and a transition frequency of 1.0 MHz, it is suited for high-current amplification. The collector-base capacitance is 500 pF at VCB=10 V. The PBFREE suffix indicates lead-free plating, consistent with RoHS compliance.